The Enhanced Light Absorptance and Device Application of Nanostructured Black Silicon Fabricated by Metal-assisted Chemical Etching
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منابع مشابه
The Enhanced Light Absorptance and Device Application of Nanostructured Black Silicon Fabricated by Metal-assisted Chemical Etching
We use metal-assisted chemical etching (MCE) method to fabricate nanostructured black silicon on the surface of C-Si. The Si-PIN photoelectronic detector based on this type of black silicon shows excellent device performance with a responsivity of 0.57 A/W at 1060 nm. Silicon nanocone arrays can be created using MCE treatment. These modified surfaces show higher light absorptance in the near-in...
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Department of Physics and Materials Scien Chee Avenue, Kowloon Tong, Kowloon, Hon Department of Biology and Chemistry, Cit Avenue, Kowloon Tong, Kowloon, Hong Kon Centre for Functional Photonics (CFP), Cit Avenue, Kowloon Tong, Kowloon, Hong Kon Shenzhen Research Institute, City Universit † Electronic supplementary informa 10.1039/c4ra06172a ‡ These authors contributed equally to th Cite this: ...
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Silicon nanowire (SiNW) arrays were prepared on silicon substrates by metal-assisted chemical etching and peeled from the substrates, and their optical properties were measured. The absorption coefficient of the SiNW arrays was higher than that for the bulk silicon over the entire region. The absorption coefficient of a SiNW array composed of 10-μm-long nanowires was much higher than the theore...
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In this paper metal-assisted chemical etching has been applied to pattern porous silicon regions and silicon nanohole arrays in submicron period simply by using positive photoresist as a mask layer. In order to define silicon nanostructures, Metal-assisted chemical etching (MaCE) was carried out with silver catalyst. Provided solution (or materiel) in combination with laser interference lithogr...
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ژورنال
عنوان ژورنال: Nanoscale Research Letters
سال: 2016
ISSN: 1931-7573,1556-276X
DOI: 10.1186/s11671-016-1528-0